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| Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated high efficiency dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYV32 series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr PARAMETER BYV32Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.85 20 25 MAX. 150 150 0.85 20 25 MAX. 200 200 0.85 20 25 UNIT V V A ns PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode (k) PIN CONFIGURATION tab SYMBOL a1 a2 k 123 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave = 0.5; Tmb 115 C sinusoidal a = 1.57; Tmb 118 C t = 25 s; = 0.5; Tmb 115 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 18 28 20 125 137 78 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s C C IO(RMS) IFRM IFSM I2t Tstg Tj 1 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. - BYV32 series TYP. 60 MAX. 2.4 1.6 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 8 A; Tj = 150C IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM MIN. TYP. 0.72 1.00 0.2 6 MAX. 0.85 1.15 0.6 30 UNIT V V mA A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 1 A; VR 30 V; -dIF/dt = 50 A/s; Tj = 100 C IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 8 20 1.5 1 MAX. 12.5 25 2 UNIT nC ns A V October 1994 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series I dI F dt F 10 PF / W Vo = 0.7 V Rs = 0.0183 Ohms BYV32 1.9 2.2 Tmb(max) / C a = 1.57 126 8 t 2.8 4 130.8 rr 6 time 4 135.6 140.4 Q I R I s 10% 100% 2 145.2 rrm 0 0 2 4 6 IF(AV) / A 8 150 10 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F 100 IF=10A time IF=1A V F V V F time 10 fr 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 C; per diode 15 PF / W Vo = 0.7 V Rs = 0.0183 Ohms BYV32 Tmb(max) / C 114 D = 1.0 trr / ns 1000 10 0.2 0.1 5 I 0.5 126 100 IF=10A IF=1A Tj = 100 C tp D= tp T t 138 10 T 0 0 5 IF(AV) / A 10 150 15 1 1 10 dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. Fig.6. Maximum trr at Tj = 100 C; per diode October 1994 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast BYV32 series 10 Irrm / A 30 IF / A Tj=150 C Tj=25 C IF=10A 1 IF=1A 20 0.1 10 typ max 0.01 1 10 -dIF/dt (A/us) 100 0 0 0.5 VF / V 1 1.5 Fig.7. Maximum Irrm at Tj = 25 C; per diode Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj 10 IF / A 100 Qs / nC IF=10A 1 IF=1A IF=10A 5A 2A 1A 10 0.1 Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Irrm at Tj = 100 C; per diode Fig.10. Maximum Qs at Tj = 25 C; per diode Zth (K/W) 10 1 0.1 P D tp t 0.01 10 us 1 ms tp / s 0.1 s 10 s Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). October 1994 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV32 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.12. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV32 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100 |
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